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| Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V A 0.6 7.3 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP07N60C2 SPB07N60C2 SPA07N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4309 Q67040-S4310 Marking 07N60C2 07N60C2 07N60C2 P-TO220-3-31 Q67040-S4331 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 C TC = 100 C A 7.3 4.6 7.31) 4.61) 14.6 230 0.5 7.3 6 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR 14.6 230 0.5 7.3 6 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =7.3A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 7.3 A, VDS < VDD , di/dt=100A/s, Tjmax =150C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 83 32 Operating and storage temperature Page 1 Tj , Tstg -55...+150 C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP07N60C2, SPB07N60C2 SPA07N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Linear derating factor Linear derating factor, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s RthJC RthJC_FP RthJA RthJA_FP RthJA - 35 - 1.5 3.9 62 80 62 0.66 0.25 260 K/W W/K C Tsold - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA V(BR)DSS V(BR)DS VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =7.3A Gate threshold voltage, VGS = VDS ID =350A Zero gate voltage drain current VDS = 600 V, VGS = 0 V, Tj = 25 C VDS = 600 V, VGS = 0 V, Tj = 150 C A 0.1 0.54 0.8 1 100 100 0.6 nA Gate-source leakage current VGS =20V, VDS=0V IGSS RDS(on) RG - Drain-source on-state resistance VGS =10V, ID=4.6A, Tj =25C Gate input resistance f = 1 MHz, open drain Page 2 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Electrical Characteristics Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance energy related Effective output capacitance, 5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =350V, ID =7.3A, VGS =0 to 10V VDD =350V, ID =7.3A Symbol Conditions min. Values typ. 4 970 370 10 30 55 11 33 47 9 7.5 16.5 27 8 Unit max. 70 13.5 35 V nC gfs Ciss Coss Crss VDS 2*ID *RDS(on)max, ID =4.6A VGS =0V, VDS =25V, f=1MHz - S pF Effective output capacitance, 4) Co(er) VGS =0V, VDS =0V to 480V td(on) tr td(off) tf VDD =380V, VGS =0/13V, ID =7.3A, RG=12, Tj=125C - ns V(plateau) VDD =350V, ID =7.3A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P AV =EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS . 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Electrical Characteristics Parameter Characteristics Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current VSD trr Qrr Irrm dirr /dt Tj=25C VGS =0V, IF=IS VR =350V, IF =IS , diF /dt=100A/s Symbol Conditions min. Values typ. 1 750 4.9 18 550 max. 7.3 14.6 1.2 1275 - Unit IS ISM TC=25C - A V ns C A A/s Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.052 0.065 0.172 0.208 0.076 Value SPA 0.024 0.047 0.065 0.177 0.457 2.516 K/W Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Unit Symbol Value SPP_B 0.0001354 0.0004561 0.0007717 0.001013 0.00738 0.068 SPA 0.00012 0.000455 0.000638 0.00144 0.00737 0.412 Unit Ws/K Tj P tot (t) R th1 E xternal H eatsink C th1 C th2 C th,n T am b Page 4 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 1 Power dissipation Ptot = f (TC ) 100 SPP07N60C2 2 Power dissiaption FullPAK Ptot = f (TC ) 35 W W 80 70 25 Ptot 60 50 40 30 20 P tot 20 15 10 5 20 40 60 80 100 120 10 0 0 0 0 C 160 20 40 60 80 100 120 TC C 150 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC =25C 10 2 4 Safe operating area FullPAK ID = f (VDS ) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 10 V VDS 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Page 5 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 5 Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (tp ) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 ZthJC 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp tp 7 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 10 s, VGS 25 8 Typ. output characteristic ID = f (VDS ); Tj=150C parameter: tp = 10 s, VGS 12 20V A 12V A 20V 12V 10V 9V ID 15 10V 8V ID 8 8.5V 6 9V 10 4 8V 7.5V 7V 5 2 7V 6.5V 6V 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Page 6 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 9 Typ. drain-source on resistance RDS(on) =f(ID ) parameter: Tj =150C, VGS 3 10 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N60C2 2.8 RDS(on) 2 RDS(on) 2.4 2 1.6 1.5 1 0 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 2 4 6 8 10 1.2 98% typ 0.4 0.8 A ID 14 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 24 12 Typ. gate charge VGS = f (QGate) parameter: ID = 7.3 A pulsed 16 SPP07N60C2 A V 20 18 12 0,2 VDS max ID 16 14 12 10 V GS 0,8 VDS max 25 C 150 C 10 8 6 8 6 4 2 2 0 0 4 8 12 4 V 20 0 0 4 8 12 16 20 24 28 32 nC 38 VGS QGate Page 7 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 13 Forward characteristics of body diode IF = f (VSD ) parameter: Tj , tp = 10 s 10 2 SPP07N60C2 14 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, RG =12 10 3 A ns tr 10 1 10 2 IF td(off) 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 t 10 1 tf td(on) 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 2 4 6 8 10 12 14 VSD A 18 ID 15 Typ. switching time t = f (RG), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V, ID=7.3 A 10 3 16 Typ. switching losses1) E = f (ID ), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, RG =12 0.4 *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different 0.3 under other operating conditions. Eon* ns mWs td(off) td(on) 10 2 tr E tf t 0.25 0.2 10 1 0.15 Eoff 0.1 0.05 10 0 0 20 40 60 80 100 RG 140 0 0 2 4 6 8 10 12 16 A ID Page 8 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 17 Typ. switching losses1) E = f(RG ), inductive load, Tj =125C par.: VDS=380V, VGS=0/+13V,ID =7.3A 0.3 *) E on includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. 18 Avalanche SOA IAR = f (tAR ) par.: Tj 150 C 8 A mWs 6 IAR E on* 0.2 E 5 Tj (START)=25C 0.15 Eoff 4 3 0.1 2 0.05 1 Tj (START)=125C 0 0 20 40 60 80 RG 120 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 4 s 10 tAR 19 Avalanche energy EAS = f (Tj ) par.: ID = 5.5 A, VDD = 50 V 260 20 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP07N60C2 720 mJ V 220 200 V (BR)DSS C 680 660 640 620 600 580 560 E AS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 160 540 -60 -20 20 60 100 C 180 Tj Page 9 Tj 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 21 Avalanche power losses PAR = f (f ) parameter: EAR =0.5mJ 300 22 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 pF W Ciss 10 3 P AR 200 C 150 10 2 Coss 100 10 1 50 Crss 04 10 10 5 Hz f 10 6 10 0 0 100 200 300 400 V 600 VDS 23 Typ. Coss stored energy Eoss=f(VDS ) 5.5 J 4.5 4 E oss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Page 10 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Definition of diodes switching characteristics Page 11 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-1 (D2-PAK) 4.4 10 0.2 0...0.3 8.5 1) A 1.27 0.1 B 0.1 2.4 1 0.3 0.05 (15) 9.25 0.2 7.55 1) 0...0.15 0.75 0.1 1.05 2.54 5.08 1) 4.7 0.5 2.7 0.3 0.5 0.1 8 MAX. 0.25 M AB 0.1 B Typical All metal surfaces: tin plated, except area of cut. Metal surface min. x=7.25, y=6.9 9.98 0.48 0.05 Page 12 2002-08-12 Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 P-TO-220-3-31 (FullPAK) 10.5 0.005 6.1 0.002 1.5 0.001 4.7 0.005 2.7 0.005 7 15.99 0.005 14.1 0.005 12.79 0.005 9.68 0.005 123 1.28 +0.003 -0.002 0.7 +0.003 -0.002 2.54 2.57 0.002 13.6 0.005 0.5 +0.005 -0.002 Please refer to mounting instructions (application note AN-TO220-3-31-01) 3.3 0.005 Page 13 2002-08-12 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP07N60C2, SPB07N60C2 SPA07N60C2 Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2002-08-12 |
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